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MgAl2O4 Substrate
April 27, 2021
LiAlO2 Substrate
April 27, 2021

Ge Substrate

Advantage

1.Sb/N doped

2.No doping

3.Semiconductor

 

Category:
Description
  • Ge single crystal is excellent semiconductor for
    Infrared and IC industry.
     

    Properties:

     

    Growth Method

    Czochralski method

    Crystal Structure

    M3

    Unit Cell Constant

    a=5.65754 Å

    Densityg/cm3

    5.323

    Melting Point

    937.4

    Doped Material

    No doped

    Sb-doped

    In / Ga –doped

    Type

    /

    N

    P

    Resistivity

    35Ωcm

    0.05Ωcm

    0.05~0.1Ωcm

    EPD

    4×103∕cm2

    4×103∕cm2

    4×103∕cm2

    Size

    10×310×510×1015×15,,20×1520×20

    dia2” x 0.33mm dia2” x
    0.43mm 15 x 15 mm

    Thickness

    0.5mm1.0mm

    Polishing

    Single or double

    Crystal Orientation

    <100><110><111>±0.5º

    Ra

    ≤5Å5µm×5µm

     

     

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